On October 18, the Seoul Economic Daily reported that Samsung Electronics will adopt the TSMC 3nm process to produce base dies for the next generation of custom HBM chips designed by Nvidia, dropping the turnkey model it has used in HBM manufacturing for years. Citing industry sources, the report said Nvidia has asked Samsung, SK Hynix and Micron to standardize on the TSMC process for NVHBM base dies, while the core memory dies will use the sixth generation DRAM process known as 1c.
NVHBM was released in August this year and integrates a custom Nvidia memory controller in the base die. Compared with standard HBM4E products, it is expected to deliver about 30 percent of additional memory bandwidth while cutting power consumption by around 15 percent. The unified manufacturing scheme removes the need for separate quality validation of each memory supplier, saving engineering resources and shortening product onboarding. Samsung has also evaluated its own foundry capacity as a backup plan in case NVHBM demand exceeds the load TSMC can carry.
The HBM business is also improving the financial picture of the Samsung foundry unit, whose losses narrowed by 41 percent, down to 3.92 trillion won in 2026 versus 6.74 trillion won in 2025, while standard HBM products remain fully in-house. For the domestic electronic components supply chain, the standardization of custom HBM manufacturing and the shifting memory supply picture continue to transmit along AI servers, AI hardware and consumer devices. Suppliers of power and protection components such as Winsemi and JoulWatt stand to benefit as AI hardware volumes spill over and lift demand for DC-DC converters, gate drivers and ESD protection. Long-Rui-Xin will keep tracking these shifts to provide customers with dynamic inventory alerts and cost optimization support.